Suppressing the formation of GeO x by doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contact

Tin (Sn) was introduced into Ge for the preparation of a thin GeSnO x by thermal oxidation, which could strongly modulate the Schottky barrier height of metal/n-Ge contacts. A small amount of Sn doping in Ge could effectively suppress the formation of GeO x during oxidation, alleviating the Fermi-le...

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Bibliographic Details
Published in:Applied physics express 2016-02, Vol.9 (2), p.21301
Main Authors: Huang, Zhiwei, Li, Cheng, Lin, Guangyang, Lai, Shumei, Wang, Chen, Huang, Wei, Wang, Jianyuan, Chen, Songyan
Format: Article
Language:English
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Summary:Tin (Sn) was introduced into Ge for the preparation of a thin GeSnO x by thermal oxidation, which could strongly modulate the Schottky barrier height of metal/n-Ge contacts. A small amount of Sn doping in Ge could effectively suppress the formation of GeO x during oxidation, alleviating the Fermi-level pinning effect in Ge. This resulted in the strong correlation between the Schottky barrier heights of metal/GeSnO x /n-Ge contacts and metal work functions. The ohmic Al/n-Ge contacts and the extremely low leakage current density of the HfO 2 /Ge structure achieved by the simple thermal oxidation of a Sn-doped Ge surface suggested the potential of this method in the fabrication of Ge-based devices.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.9.021301