Characterization of GaSb photodiode for gamma-ray detection

We extract the carrier mobility-lifetime products for epitaxially grown GaSb and demonstrate the spectral response to gamma rays of a GaSb p-i-n photodiode with a 2-µm-thick absorption region. Under exposure from 55Fe and 241Am radioactive sources at 140 K, the photodiode exhibits full width at half...

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Bibliographic Details
Published in:Applied physics express 2016-08, Vol.9 (8), p.86401
Main Authors: Juang, Bor-Chau, Prout, David L., Liang, Baolai, Chatziioannou, Arion F., Huffaker, Diana L.
Format: Article
Language:English
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Summary:We extract the carrier mobility-lifetime products for epitaxially grown GaSb and demonstrate the spectral response to gamma rays of a GaSb p-i-n photodiode with a 2-µm-thick absorption region. Under exposure from 55Fe and 241Am radioactive sources at 140 K, the photodiode exhibits full width at half maximum energy resolutions of 1.238 ± 0.028 and 1.789 ± 0.057 keV at 5.89 and 59.5 keV, respectively. We observe good linearity of the GaSb photodiode across a range of photon energies. The electronic noise and charge trapping noise are measured and shown to be the main components limiting the measured energy resolutions.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.9.086401