pIn x Ga 1-x Sb–nGa 1-y Al y Sb Heterojunction Photodiodes

Highly efficient, lattice-matched heterojunction photodiodes were fabricated by liquid-phase-epitaxial growth of a pIn 0.07 Ga 0.93 Sb layer, followed by an nGa 0.3 Al 0.7 Sb layer on the p-type (111) GaSb substrate. The spectral photocurrent response of the diodes was nearly flat in the wavelength...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1980-01, Vol.19 (S1), p.383
Main Authors: Mizuki, Toshio, Sugimoto, Yoshimasa, Tanaka, Akira, Sukegawa, Tokuzo
Format: Article
Language:English
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Summary:Highly efficient, lattice-matched heterojunction photodiodes were fabricated by liquid-phase-epitaxial growth of a pIn 0.07 Ga 0.93 Sb layer, followed by an nGa 0.3 Al 0.7 Sb layer on the p-type (111) GaSb substrate. The spectral photocurrent response of the diodes was nearly flat in the wavelength range of 1.0–1.8 µm. The external guantum efficiency of photodiodes was 32% at zero voltage bias in the vicinity of 1.5 µm where a minimum loss of optical fibre was reported.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAPS.19S1.383