A New Self-Aligned Framed Mask Method for Selective Oxidation

A new selective oxidation method, which realizes fine isolation width for MOS LSIs, has been developed. The oxidation mask in this method has a Si 3 N 4 frame formed at a perimeter of a conventional mask pattern by self-aligned technique. This technique is composed of deposition step of Si 3 N 4 fil...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1981-01, Vol.20 (S1), p.55
Main Authors: Minegishi, Kazushige, Imai, Kazuo, Kiuchi, Kazuhide, Hirata, Kazuo, Yoriume, Yutaka
Format: Article
Language:English
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Summary:A new selective oxidation method, which realizes fine isolation width for MOS LSIs, has been developed. The oxidation mask in this method has a Si 3 N 4 frame formed at a perimeter of a conventional mask pattern by self-aligned technique. This technique is composed of deposition step of Si 3 N 4 film to cover the conventional mask and dry etching step of this film to form the frame without a photoresist pattern. Bird's beak extent is suppressed to less than 300 nm. Dislocation generation in silicon substrate is also suppressed in this framed mask method. Bird's beak suppression brings about extention in an effective device area and realizes a transistor with effective channel width 1.0 µm wider than that in the conventional mask method. The p-n junction prepared by this new method exhibits as small leakage current as that by the conventional method.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAPS.20S1.55