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Effects of Interface Nitride Layer on Electrical Characteristics of SiO 2 /Nitride/SiC Metal–Insulator–Semiconductor Diode

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2011-01, Vol.50 (1S2), p.1
Main Authors: Yamakami, Tomohiko, Suzuki, Shinichiro, Henmi, Mitsunori, Murata, Yusuke, Hayashibe, Rinpei, Kamimura, Kiichi
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.50.01BG02