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Effect of Annealing-Induced Interdiffusion on the Electronic Structure of Mid Infrared Emitting GaInAsSb/AlGaInAsSb Quantum Wells

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2011-03, Vol.50 (3R), p.31202
Main Authors: Ryczko, Krzysztof, Sęk, Grzegorz, Motyka, Marcin, Janiak, Filip, Kubisa, Maciej, Misiewicz, Jan, Belahsene, Sofiane, Boissier, Guilhem, Rouillard, Yves
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.50.031202