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Employ Present Five Masks Amorphous Silicon Thin-Film Transistor Design and Process Flow to Realize 5-in. InGaZnO Active-Matrix Liquid Crystal Display with Improved Stress Stability
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Published in: | Japanese Journal of Applied Physics 2011-03, Vol.50 (3S), p.3, Article 03CB07 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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ISSN: | 1347-4065 0021-4922 1347-4065 |
DOI: | 10.7567/JJAP.50.03CB07 |