Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2011-10, Vol.50 (10R), p.100202
Main Authors: Yafune, Norimasa, Hashimoto, Shin, Akita, Katsushi, Yamamoto, Yoshiyuki, Kuzuhara, Masaaki
Format: Article
Language:eng ; jpn
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.50.100202