Dependence of Hot Carrier Reliability and Low Frequency Noise on Channel Stress in Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2011-10, Vol.50 (10S), p.10
Main Authors: Kwon, Hyuk-Min, Bok, Jung-Deuk, Han, In-Shik, Park, Sang-Uk, Jung, Yi-Jung, Jang, Jae-Hyung, Ko, Sung-Yong, Lee, Won-Mook, Lee, Ga-Won, Lee, Hi-Deok
Format: Article
Language:eng ; jpn
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.50.10PB01