High Quality GaN Grown on Si(111) Using Fast Coalescence Growth

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2011-12, Vol.50 (12R), p.121001
Main Authors: Luo, Ruihong, Xiang, Peng, Liu, Minggang, Chen, Tufu, He, Zhiyuan, Fan, Bingfeng, Zhao, Yu, Xian, Yulun, Wu, Zhisheng, Jiang, Hao, Wang, Gang, Liu, Yang, Zhang, Baijun
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.50.121001