Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology

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Published in:Japanese Journal of Applied Physics 2012-01, Vol.51 (1S), p.1
Main Authors: Ive, Tommy, Berland, Kristian, Stattin, Martin, Fälth, Fredrik, Hyldgaard, Per, Larsson, Anders, Andersson, Thorvald G.
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Language:eng ; jpn
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source Institute of Physics IOPscience extra; Institute of Physics
title Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology
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