Mechanism Analysis of Current–Voltage Characteristic in a Lightly Doped Drain Polycrystalline Silicon Thin-Film Transistor Using Activation Energy

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2012-03, Vol.51 (3S), p.3
Main Authors: Kimura, Mutsumi, Nakashima, Akihiro
Format: Article
Language:eng ; jpn
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.51.03CA05