Unstrained Epitaxial Zn-Substituted Fe 3 O 4 Films for Ferromagnetic Field-Effect Transistors

A field-effect transistor has been fabricated utilizing an epitaxial film of unstrained zinc-substituted magnetite (Fe 3 O 4 ) as the active channel. A thin film of Fe 2.5 Zn 0.5 O 4 was grown on a lattice-matched MgO(001) substrate by pulsed-laser deposition and covered by a parylene gate insulator...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2013-06, Vol.52 (6R), p.68002
Main Authors: Ichimura, Takashi, Fujiwara, Kohei, Kushizaki, Takayoshi, Kanki, Teruo, Tanaka, Hidekazu
Format: Article
Language:English
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Summary:A field-effect transistor has been fabricated utilizing an epitaxial film of unstrained zinc-substituted magnetite (Fe 3 O 4 ) as the active channel. A thin film of Fe 2.5 Zn 0.5 O 4 was grown on a lattice-matched MgO(001) substrate by pulsed-laser deposition and covered by a parylene gate insulator to dope charge carriers by a field effect. The device showed a field-effect mobility of 1.2 ×10 -2 cm 2 V -1 s -1 at 300 K, which is higher by a factor of 15 than those of the devices with strained Fe 2.5 Zn 0.5 O 4 channels on perovskite-type substrates. The enhanced response to the gate electric field is useful in exploring gate-tunable magnetism in magnetite.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.068002