Effect of rear-surface buffer layer on performance of lift-off Cu(In,Ga)Se 2 solar cells

The effect of an Au and MoO x rear-surface buffer layer inserted between Cu(In,Ga)Se 2 (CIGS) and ZnO:Al on solar cell performances was examined. The lift-off CIGS solar cell without a rear-surface buffer layer showed particular characteristics of two series-connected diodes in the reverse direction...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2014-05, Vol.53 (5S1), p.5
Main Authors: Aoyagi, Kenta, Tamura, Akihiro, Takakura, Hideyuki, Minemoto, Takashi
Format: Article
Language:English
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Summary:The effect of an Au and MoO x rear-surface buffer layer inserted between Cu(In,Ga)Se 2 (CIGS) and ZnO:Al on solar cell performances was examined. The lift-off CIGS solar cell without a rear-surface buffer layer showed particular characteristics of two series-connected diodes in the reverse direction, and its short-circuit current density was almost zero. In contrast, the Au or MoO x rear-surface buffer layer improved these characteristics. Although the lift-off CIGS solar cell with the Au rear-surface buffer layer showed shunt characteristics and low efficiency, the efficiency of the lift-off CIGS solar cell with the MoO x rear-surface buffer layer was approximately 50% of that of substrate-type CIGS solar cells. Diode parameters of lift-off CIGS solar cells were determined by fitting analysis of current density–voltage curves using a proposed new equivalent circuit model for lift-off CIGS solar cells.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.53.05FW05