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Mechanism of state transition of a defect causing random-telegraph-noise-induced fluctuation in stress-induced leakage current of SiO 2 films

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Bibliographic Details
Published in:	Japanese Journal of Applied Physics 2014-08, Vol.53 (8S1), p.8
Main Authors:	Ishida, Takeshi, Tega, Naoki, Mori, Yuki, Miki, Hiroshi, Mine, Toshiyuki, Kume, Hitoshi, Torii, Kazuyoshi, Yamada, Ren-ichi, Shiraishi, Kenji
Format:	Article
Language:	English
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Online Access:	Get full text
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