A 4F 2 -cross-point phase change memory using nano-crystalline doped GeSbTe material

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2015-04, Vol.54 (4S), p.4
Main Authors: Takaura, Norikatsu, Kinoshita, Masaharu, Tai, Mitsuharu, Ohyanagi, Takasumi, Akita, Kenichi, Morikawa, Takahiro
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.54.04DD01