Density of states of short channel amorphous In-Ga-Zn-O thin-film transistor arrays fabricated using manufacturable processes

The effect of temperature on the electrical characteristics of the short channel amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT) arrays fabricated using manufacturable processes was investigated. This work shows that the fabricated TFT arrays are acceptable and stable enough for manufacturi...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2015-05, Vol.54 (5), p.51101
Main Authors: Kim, Soo Chang, Kim, Young Sun, Kanicki, Jerzy
Format: Article
Language:English
Subjects:
Arrays
Channels
Density of states
Extraction
Liquid crystal displays
Semiconductor devices
Thin film transistors
Voltage
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Summary:The effect of temperature on the electrical characteristics of the short channel amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT) arrays fabricated using manufacturable processes was investigated. This work shows that the fabricated TFT arrays are acceptable and stable enough for manufacturing of the ultra high definition (UHD) active matrix liquid crystal displays in size larger than 55 in. We observed that studied a-IGZO TFT arrays obeyed the Meyer-Neldel (MN) rule over a broad range of gate bias voltages. The MN rule and exponential subgap density of states (DOS) model were combined to extract the DOS distribution for the investigated a-IGZO TFT arrays. The results were consistent with the previous works on single a-IGZO TFTs. This study demonstrates that this method of DOS extraction can be applied to both single devices and arrays, and is reproducible from lab to lab. We believe that this approach of DOS extraction is useful for further development of UHD flat panel display technology.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.54.051101