Heteroepitaxial growth of β-AlN films on sapphire (0001) in nitrogen atmospheres by pulse laser deposition

β-AlN thin films were heteroepitaxially grown on sapphire (0001) substrates with a smooth surface showing steps in nitrogen atmospheres by pulsed laser deposition using sintered AlN targets, and their films were structurally studied by X-ray diffraction (XRD) and transmission electron microscopy (TE...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2015-06, Vol.54 (6S1), p.6
Main Authors: Yoshida, Tomohiro, Ueda, Y taro, Daio, Takeshi, Tominaga, Aki, Okajima, Toshihiro, Yoshitake, Tsuyoshi
Format: Article
Language:English
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Summary:β-AlN thin films were heteroepitaxially grown on sapphire (0001) substrates with a smooth surface showing steps in nitrogen atmospheres by pulsed laser deposition using sintered AlN targets, and their films were structurally studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Horizontally oriented growth of β-AlN(111) was confirmed by XRD in 2θ-θ scan. The epitaxial relationship between β-AlN and sapphire was derived to be β-AlN(111) sapphire (0001) from the TEM measurement. The existence of dislocation defects was implied from the electron diffraction pattern of the film. The heteroepitaxial growth probably occurs in domain match epitaxy, accompanied by the generation of dislocations defects at the interface.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.54.06FJ05