Laser doping of boron-doped Si paste for high-efficiency silicon solar cells

Boron laser doping (LD) is a promising technology for high-efficiency solar cells such as p-type passivated locally diffused solar cells and n-type Si-wafer-based solar cells. We produced a printable phosphorus- or boron-doped Si paste (NanoGram® Si paste/ink) for use as a diffuser in the LD process...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2015-08, Vol.54 (8S1), p.8
Main Authors: Tomizawa, Yuka, Imamura, Tetsuya, Soeda, Masaya, Ikeda, Yoshinori, Shiro, Takashi
Format: Article
Language:English
Subjects:
Boron
Diffusion
Lasers
LD process
Pastes
Photovoltaic cells
Silicon
Solar cells
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Summary:Boron laser doping (LD) is a promising technology for high-efficiency solar cells such as p-type passivated locally diffused solar cells and n-type Si-wafer-based solar cells. We produced a printable phosphorus- or boron-doped Si paste (NanoGram® Si paste/ink) for use as a diffuser in the LD process. We used the boron LD process to fabricate high-efficiency passivated emitter and rear locally diffused (PERL) solar cells. PERL solar cells on Czochralski Si (Cz-Si) wafers yielded a maximum efficiency of 19.7%, whereas the efficiency of a reference cell was 18.5%. Fill factors above 79% and open circuit voltages above 655 mV were measured. We found that the boron-doped area effectively performs as a local boron back surface field (BSF). The characteristics of the solar cell formed using NanoGram® Si paste/ink were better than those of the reference cell.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.54.08KD06