Radiation response of silicon carbide metal-oxide-semiconductor transistors in high dose region

Radiation response of vertical structure hexagonal (4H) silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) was investigated up to 5.8 MGy. The drain current-gate voltage curves for the MOSFETs shifted from positive to negative voltages due to irradiation. Howeve...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2016-01, Vol.55 (1S), p.1
Main Authors: Ohshima, Takeshi, Yokoseki, Takashi, Murata, Koichi, Matsuda, Takuma, Mitomo, Satoshi, Abe, Hiroshi, Makino, Takahiro, Onoda, Shinobu, Hijikata, Yasuto, Tanaka, Yuki, Kandori, Mikio, Okubo, Shuichi, Yoshie, Toru
Format: Article
Language:English
Subjects:
Channels
Drains
Electric potential
Irradiation
MOSFETs
Semiconductor devices
Silicon carbide
Voltage
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Summary:Radiation response of vertical structure hexagonal (4H) silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) was investigated up to 5.8 MGy. The drain current-gate voltage curves for the MOSFETs shifted from positive to negative voltages due to irradiation. However, the drain current-gate voltage curve shifts for the MOSFETs irradiated at 150 °C was smaller than those irradiated at room temperature. Thus, the shift of threshold voltage due to irradiation was suppressed by irradiation at 150 °C. No significant change or slight decrease in subthreshold voltage swing for the MOSFETs irradiated at 150 °C was observed. The value of channel mobility increased due to irradiation, and the increase was enhanced by irradiation at 150 °C comparing to irradiation at RT.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.55.01AD01