Effects of trap-assisted tunneling on gate-induced drain leakage in silicon-germanium channel p-type FET for scaled supply voltages

Silicon-germanium is considered as an alternative channel material to silicon p-type FET (pFET) for the development of energy efficient high performance transistors for 28 nm and beyond in a high-k metal gate technology because of its lower threshold voltage and higher mobility. However, gate-induce...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2016-04, Vol.55 (4S), p.4
Main Authors: Tiwari, Vishal A., Divakaruni, Rama, Hook, Terence B., Nair, Deleep R.
Format: Article
Language:English
Subjects:
Channels
Computer simulation
Devices
Drains
Mathematical models
Silicon germanides
Threshold voltage
Tunneling
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Summary:Silicon-germanium is considered as an alternative channel material to silicon p-type FET (pFET) for the development of energy efficient high performance transistors for 28 nm and beyond in a high-k metal gate technology because of its lower threshold voltage and higher mobility. However, gate-induced drain leakage (GIDL) is a concern for high threshold voltage device design because of tunneling at reduced bandgap. In this work, the trap-assisted tunneling and band-to-band tunneling (BTBT) effects on GIDL is analyzed and modeled for SiGe pFETs. Experimental results and Monte Carlo simulation results reveal that the pre-halo germanium pre-amorphization implant used to contain the short channel effects contribute to GIDL at the drain sidewall in addition to GIDL due to BTBT in SiGe devices. The results are validated by comparing the experimental observations with the numerical simulation and a set of calibrated models are used to describe the GIDL mechanisms for various drain and gate bias.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.55.04ED03