Structural and magnetic characterization of Sm-doped GaN grown by plasma-assisted molecular beam epitaxy

We have investigated structural, optical and magnetic properties of Sm-doped GaN thin films grown by plasma-assisted molecular beam epitaxy. Reflection high-energy electron diffraction and X-ray diffraction reveal that Ga1−xSmxN films with a SmN mole fraction of ∼8% or below are grown on GaN templat...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2016-05, Vol.55 (5S), p.5
Main Authors: Dehara, Kentaro, Miyazaki, Yuta, Hasegawa, Shigehiko
Format: Article
Language:English
Subjects:
Diffraction
Gallium nitrides
Magnetic fields
Magnetic properties
Magnetization
Molecular beam epitaxy
Moles
Segregations
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Summary:We have investigated structural, optical and magnetic properties of Sm-doped GaN thin films grown by plasma-assisted molecular beam epitaxy. Reflection high-energy electron diffraction and X-ray diffraction reveal that Ga1−xSmxN films with a SmN mole fraction of ∼8% or below are grown on GaN templates without segregation of any secondary phases. With increasing SmN mole fraction, the c-axis lattice parameter of the GaSmN films linearly increases. GaSmN films with low Sm concentrations exhibit inner-4f transitions of Sm3+ in photoluminescence spectra. The present findings show that Sm atoms are substituted for some Ga atoms as trivalent ions (Sm3+). The Ga1−xSmxN films display hysteresis loops in magnetization versus external magnetic field (M-H) curves even at 300 K. We will discuss the origin of these features together with the corresponding temperature dependences of magnetization.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.55.05FE03