Use of self-assembled monolayers for selective metal removal and ultrathin gate dielectrics in MoS 2 field-effect transistors

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2017-04, Vol.56 (4S), p.4
Main Authors: Du, Wanjing, Kawanago, Takamasa, Oda, Shunri
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.56.04CP10