Carrier concentration dependence of thermoelectric properties of Fe(V1−x,Tix)Sb half-Heusler phase

The thermoelectric properties of the FeV1−xTixSb half-Heusler (HH) phase were studied in the temperature range from 300 to 700 K. All the samples prepared with the compositions of FeV1−xTixSb (0 ≤ x ≤ 0.2) possessed a positive Seebeck coefficient, while the sample with x = 0 showed a negative sign....

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2017-11, Vol.56 (11), p.111202
Main Authors: Delime-Codrin, Kévin, Yamada, Tatsuya, Yamamoto, Akio, Sobota, Robert, Matsunami, Masaharu, Takeuchi, Tsunehiro
Format: Article
Language:English
Subjects:
Carrier density
Dependence
Electrical resistivity
Phonons
Power factor
Properties (attributes)
Seebeck effect
Thermal conductivity
Thermoelectric materials
Thermoelectricity
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Summary:The thermoelectric properties of the FeV1−xTixSb half-Heusler (HH) phase were studied in the temperature range from 300 to 700 K. All the samples prepared with the compositions of FeV1−xTixSb (0 ≤ x ≤ 0.2) possessed a positive Seebeck coefficient, while the sample with x = 0 showed a negative sign. FeV0.80Ti0.20Sb exhibited a large positive Seebeck coefficient exceeding 300 µV K−1 and a low electrical resistivity below 2.00 ± 0.20 mΩ cm at 700 K, leading to a large power factor PF = 4.40 ± 0.50 × 10−3 W m−1 K−2. The thermal conductivity of FeV1−xTixSb (x > 0) at 300 K decreased to less than half of that of the sample at x = 0, probably because the disordering caused by the Ti substitution enhanced the scattering probability of phonons. The consistency between measured and calculated properties indicates that FeV1−xTixSb HH is suitable as a new practical thermoelectric material.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.56.111202