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Characteristics of quantum-dot light-emitting diodes fabricated using a sputtered zinc tin oxide electron-transporting layer
Quantum-dot light-emitting diodes (QD-LEDs) with a sputtered zinc tin oxide (ZTO) electron-transporting layer (ETL) were studied. A ZTO after-deposition treatment process consisting of oxygen plasma treatment and thermal annealing was studied to improve the performance of the sputtered metal oxide E...
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Published in: | Japanese Journal of Applied Physics 2018-03, Vol.57 (3S1), p.3 |
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container_title | Japanese Journal of Applied Physics |
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creator | Kim, Dong-Jin Lee, Ho-Nyeon |
description | Quantum-dot light-emitting diodes (QD-LEDs) with a sputtered zinc tin oxide (ZTO) electron-transporting layer (ETL) were studied. A ZTO after-deposition treatment process consisting of oxygen plasma treatment and thermal annealing was studied to improve the performance of the sputtered metal oxide ETL. The optical and electrical properties of the ZTO ETL could be controlled by adjusting the thermal annealing temperature. The best performing QD-LED was obtained by applying the oxygen plasma treatment and 250 °C thermal annealing in N2 atmosphere in sequence. The relation between the ZTO ETL properties and the device performance was explained by considering the roles of the band gap defect states. In this work, we provide a way to control the ZTO ETL properties and to improve the QD-LED device performance by applying an after-deposition treatment to the ZTO ETL. |
doi_str_mv | 10.7567/JJAP.57.03DC01 |
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A ZTO after-deposition treatment process consisting of oxygen plasma treatment and thermal annealing was studied to improve the performance of the sputtered metal oxide ETL. The optical and electrical properties of the ZTO ETL could be controlled by adjusting the thermal annealing temperature. The best performing QD-LED was obtained by applying the oxygen plasma treatment and 250 °C thermal annealing in N2 atmosphere in sequence. The relation between the ZTO ETL properties and the device performance was explained by considering the roles of the band gap defect states. In this work, we provide a way to control the ZTO ETL properties and to improve the QD-LED device performance by applying an after-deposition treatment to the ZTO ETL.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.57.03DC01</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: The Japan Society of Applied Physics</publisher><subject>Annealing ; Deposition ; Electrical properties ; Electron transport ; Heat treatment ; Light emitting diodes ; Optical properties ; Organic light emitting diodes ; Oxygen plasma ; Performance enhancement ; Plasma ; Quantum dots ; Tin oxides</subject><ispartof>Japanese Journal of Applied Physics, 2018-03, Vol.57 (3S1), p.3</ispartof><rights>2018 The Japan Society of Applied Physics</rights><rights>Copyright Japanese Journal of Applied Physics Mar 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c368t-74f1e37e856707f618069ad7ab7177d4f33def57227248b677af5cdbad9fcc413</citedby><cites>FETCH-LOGICAL-c368t-74f1e37e856707f618069ad7ab7177d4f33def57227248b677af5cdbad9fcc413</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/JJAP.57.03DC01/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27924,27925,38868,53840</link.rule.ids></links><search><creatorcontrib>Kim, Dong-Jin</creatorcontrib><creatorcontrib>Lee, Ho-Nyeon</creatorcontrib><title>Characteristics of quantum-dot light-emitting diodes fabricated using a sputtered zinc tin oxide electron-transporting layer</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>Quantum-dot light-emitting diodes (QD-LEDs) with a sputtered zinc tin oxide (ZTO) electron-transporting layer (ETL) were studied. A ZTO after-deposition treatment process consisting of oxygen plasma treatment and thermal annealing was studied to improve the performance of the sputtered metal oxide ETL. The optical and electrical properties of the ZTO ETL could be controlled by adjusting the thermal annealing temperature. The best performing QD-LED was obtained by applying the oxygen plasma treatment and 250 °C thermal annealing in N2 atmosphere in sequence. The relation between the ZTO ETL properties and the device performance was explained by considering the roles of the band gap defect states. In this work, we provide a way to control the ZTO ETL properties and to improve the QD-LED device performance by applying an after-deposition treatment to the ZTO ETL.</description><subject>Annealing</subject><subject>Deposition</subject><subject>Electrical properties</subject><subject>Electron transport</subject><subject>Heat treatment</subject><subject>Light emitting diodes</subject><subject>Optical properties</subject><subject>Organic light emitting diodes</subject><subject>Oxygen plasma</subject><subject>Performance enhancement</subject><subject>Plasma</subject><subject>Quantum dots</subject><subject>Tin oxides</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kM1LxDAQxYMouK5ePQe8Ca1Jm3ba41K_WdCDnkuaj90s3aabpOCKf7xdK3jyNMzj994wD6FLSmLIcrh5fl68xhnEJL2tCD1CM5oyiBjJs2M0IyShESuT5BSdeb8Z1zxjdIa-qjV3XATljA9GeGw13g28C8M2kjbg1qzWIVJbE4LpVlgaK5XHmjfOCB6UxIM_6Bz7fghjyqh8mk7gkcb2w0iFVatEcLaLguOd7637CWr5XrlzdKJ569XF75yj9_u7t-oxWr48PFWLZSTSvAgRME1VCqoYvySgc1qQvOQSeAMUQDKdplLpDJIEElY0OQDXmZANl6UWgtF0jq6m3N7Z3aB8qDd2cN14sk4Ig7Io87IcqXiihLPeO6Xr3pktd_uakvrQcH1ouM6gnhoeDdeTwdj-L_Ef-BvS9X6x</recordid><startdate>20180301</startdate><enddate>20180301</enddate><creator>Kim, Dong-Jin</creator><creator>Lee, Ho-Nyeon</creator><general>The Japan Society of Applied Physics</general><general>Japanese Journal of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20180301</creationdate><title>Characteristics of quantum-dot light-emitting diodes fabricated using a sputtered zinc tin oxide electron-transporting layer</title><author>Kim, Dong-Jin ; Lee, Ho-Nyeon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-74f1e37e856707f618069ad7ab7177d4f33def57227248b677af5cdbad9fcc413</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Annealing</topic><topic>Deposition</topic><topic>Electrical properties</topic><topic>Electron transport</topic><topic>Heat treatment</topic><topic>Light emitting diodes</topic><topic>Optical properties</topic><topic>Organic light emitting diodes</topic><topic>Oxygen plasma</topic><topic>Performance enhancement</topic><topic>Plasma</topic><topic>Quantum dots</topic><topic>Tin oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Dong-Jin</creatorcontrib><creatorcontrib>Lee, Ho-Nyeon</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Dong-Jin</au><au>Lee, Ho-Nyeon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characteristics of quantum-dot light-emitting diodes fabricated using a sputtered zinc tin oxide electron-transporting layer</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2018-03-01</date><risdate>2018</risdate><volume>57</volume><issue>3S1</issue><spage>3</spage><pages>3-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>Quantum-dot light-emitting diodes (QD-LEDs) with a sputtered zinc tin oxide (ZTO) electron-transporting layer (ETL) were studied. A ZTO after-deposition treatment process consisting of oxygen plasma treatment and thermal annealing was studied to improve the performance of the sputtered metal oxide ETL. The optical and electrical properties of the ZTO ETL could be controlled by adjusting the thermal annealing temperature. The best performing QD-LED was obtained by applying the oxygen plasma treatment and 250 °C thermal annealing in N2 atmosphere in sequence. The relation between the ZTO ETL properties and the device performance was explained by considering the roles of the band gap defect states. In this work, we provide a way to control the ZTO ETL properties and to improve the QD-LED device performance by applying an after-deposition treatment to the ZTO ETL.</abstract><cop>Tokyo</cop><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.57.03DC01</doi><tpages>4</tpages></addata></record> |
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source | Institute of Physics IOPscience extra; Institute of Physics |
subjects | Annealing Deposition Electrical properties Electron transport Heat treatment Light emitting diodes Optical properties Organic light emitting diodes Oxygen plasma Performance enhancement Plasma Quantum dots Tin oxides |
title | Characteristics of quantum-dot light-emitting diodes fabricated using a sputtered zinc tin oxide electron-transporting layer |
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