Revisited study of fluorine implantation impact on negative bias temperature instability for input/output device of automotive micro controller unit

We investigate the effect of fluorine implanted in the polycrystalline silicon (poly-Si) gate and source/drain (S/D) region on negative bias temperature instability (NBTI) improvement. It is found that there is a trade-off implantation energy dependence of NBTI between fluorine in the poly-Si gate a...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2018-04, Vol.57 (4S), p.4
Main Authors: Yoshida, Tetsuya, Maekawa, Keiichi, Tsuda, Shibun, Shimizu, Tatsuo, Ogasawara, Makoto, Aono, Hideki, Yamaguchi, Yasuo
Format: Article
Language:English
Subjects:
Bias
Control stability
Crashworthiness
D region
Dependence
Fluorine
Impact strength
Implantation
Microcontrollers
Silicon
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Summary:We investigate the effect of fluorine implanted in the polycrystalline silicon (poly-Si) gate and source/drain (S/D) region on negative bias temperature instability (NBTI) improvement. It is found that there is a trade-off implantation energy dependence of NBTI between fluorine in the poly-Si gate and that in the S/D region. Fluorine implanted in the poly-Si gate contributes to NBTI improvement under low energy implantation. On the other hand, NBTI is improved by fluorine implanted in the S/D region under high energy. We propose that the two-step implantation process with high and low energy is the optimum condition for NBTI improvement.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.04FD16