Reaction mechanisms at 4H-SiC/SiO 2 interface during wet SiC oxidation

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2018-04, Vol.57 (4S), p.4
Main Authors: Akiyama, Toru, Hori, Shinsuke, Nakamura, Kohji, Ito, Tomonori, Kageshima, Hiroyuki, Uematsu, Masashi, Shiraishi, Kenji
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.04FR08