GaN microrod sidewall epitaxial lateral overgrowth on a close-packed microrod template

We demonstrate a GaN growth method using microrod sidewall epitaxial lateral overgrowth (MSELO) on a close-packed microrod template by a nonlithographic technique. The density and distribution of threading dislocations were determined by the density and distribution of microrods and the nucleation m...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2018-05, Vol.57 (5), p.50305
Main Authors: Duan, Xiaoling, Zhang, Jincheng, Xiao, Ming, Zhang, Jinfeng, Hao, Yue
Format: Article
Language:English
Subjects:
Coalescing
Curvature
Dislocation density
Epitaxial growth
Misalignment
Nucleation
Substrates
Threading dislocations
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Summary:We demonstrate a GaN growth method using microrod sidewall epitaxial lateral overgrowth (MSELO) on a close-packed microrod template by a nonlithographic technique. The density and distribution of threading dislocations were determined by the density and distribution of microrods and the nucleation model. MSELO exhibited two different nucleation models determined by the direction and degree of substrate misorientation and the sidewall curvature: one-sidewall and three-sidewall nucleation, predicting the dislocation density values. As a result, the threading dislocation density was markedly decreased from 2 × 109 to 5 × 107 cm−2 with a small coalescence thickness of ∼2 µm for the close-packed 3000 nm microrod sample.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.050305