Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding

Crack-free 200 mm diameter N-polar GaN-on-insulator (GaN-OI) wafers are demonstrated by the transfer of metalorganic chemical vapor deposition (MOCVD)-grown Ga-polar GaN layers from Si(111) wafers onto SiO2/Si(100) wafers. The wafer curvature of the GaN-OI wafers after the removal of the original Si...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2018-05, Vol.57 (5), p.51002
Main Authors: Zhang, Li, Lee, Kwang Hong, Kadir, Abdul, Wang, Yue, Lee, Kenneth E., Tan, Chuan Seng, Chua, Soo Jin, Fitzgerald, Eugene A.
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Buffer layers
Chemical vapor deposition
Curvature
Gallium nitrides
Metalorganic chemical vapor deposition
Residual stress
Silicon dioxide
Silicon substrates
Stress concentration
Stress distribution
Wafers
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Summary:Crack-free 200 mm diameter N-polar GaN-on-insulator (GaN-OI) wafers are demonstrated by the transfer of metalorganic chemical vapor deposition (MOCVD)-grown Ga-polar GaN layers from Si(111) wafers onto SiO2/Si(100) wafers. The wafer curvature of the GaN-OI wafers after the removal of the original Si(111) substrate is correlated with the wafer curvature of the starting GaN-on-Si wafers and the voids on the GaN-on-Si surface that evolve into cracks on the GaN-OI wafers. In crack-free GaN-OI wafers, the wafer curvature during the removal of the AlN nucleation layer, AlGaN strain-compensation buffer layers and GaN layers is correlated with the residual stress distribution within individual layers in the GaN-OI wafer.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.051002