Lattice contraction with boron doping in fully strained SiGe epitaxial layers

Changes in lattice constants of epitaxial SiGe layers by boron (B) doping were studied by using high resolution X-ray diffraction (HRXRD) by using SiGe:B with Ge and B concentrations in the range of 11-23% and (1.5-4.2) × 1019 cm−3, respectively. The lattice contraction coefficient (β) of B in SiGe...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2018-06, Vol.57 (6), p.65504
Main Authors: Shin, Keun Wook, Song, Sukchan, Kim, Hyun-Woo, Lee, Gun-Do, Yoon, Euijoon
Format: Article
Language:English
Subjects:
Boron
Doping
Epitaxial layers
Germanium
Lattice parameters
Mathematical analysis
Silicon germanides
X-ray diffraction
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Summary:Changes in lattice constants of epitaxial SiGe layers by boron (B) doping were studied by using high resolution X-ray diffraction (HRXRD) by using SiGe:B with Ge and B concentrations in the range of 11-23% and (1.5-4.2) × 1019 cm−3, respectively. The lattice contraction coefficient (β) of B in SiGe was measured to be (9.6 ± 0.6) × 10−24 cm3, which was approximately twice as large as that of B in Si. The ab initio calculation of β, 9.35 × 10−24 cm3, was in excellent agreement with the experiment. From the ab initio calculation, it is found that the large lattice contraction is due to the favorability of Si-B bond than Si-Ge bond.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.065504