Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide

In our new GaN-based quantum well (QW) laser diode (LD) structure, an unintentionally doped GaN layer (u-GaN) is designed to replace the conventional p-GaN upper waveguide (UWG) and is shifted to locate between the last quantum barrier and the electron-blocking layer. Theoretical calculation demonst...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2018-07, Vol.57 (7), p.70307
Main Authors: Liang, Feng, Zhao, De-Gang, Jiang, De-Sheng, Liu, Zong-Shun, Zhu, Jian-Jun, Chen, Ping, Yang, Jing, Liu, Wei, Liu, Shuang-Tao, Xing, Yao, Zhang, Li-Qun, Wang, Wen-Jie, Li, Mo, Zhang, Yuan-Tao, Du, Guo-Tong
Format: Article
Language:English
Subjects:
Diodes
Gallium nitrides
Leakage current
Performance enhancement
Pulsed current
Quantum wells
Semiconductor lasers
Threshold currents
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Summary:In our new GaN-based quantum well (QW) laser diode (LD) structure, an unintentionally doped GaN layer (u-GaN) is designed to replace the conventional p-GaN upper waveguide (UWG) and is shifted to locate between the last quantum barrier and the electron-blocking layer. Theoretical calculation demonstrates that the performance of the new LD can be improved significantly by reducing the optical loss and leakage current. Moreover, the experimental results verify that, compared with that of the conventional LD, the threshold current density of the new LD, i.e., 3.8 kA/cm2, is reduced by 46% and the maximal light power increases by 137% under a pulsed current of 1200 mA.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.070307