Effects of As 2 pressure on InAs heteroepitaxial growth on vicinal GaSb(001) substrate by molecular beam epitaxy

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2018-11, Vol.57 (11), p.115502
Main Authors: Okumura, Shigekazu, Tomabechi, Shuichi, Suzuki, Ryo, Tsunoda, Koji, Kon, Jun-ichi, Nishino, Hironori
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.115502