Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers

The origin of the microscopic inhomogeneities in InxGa1−xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8 μm, composition inhomogeneities are responsible for the band edge sm...

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Bibliographic Details
Published in:Journal of applied physics 1997-08, Vol.82 (3), p.1147-1152
Main Authors: Roura, P., Vilà, A., Bosch, J., López, M., Cornet, A., Morante, J. R., Westwood, D. I.
Format: Article
Language:English
Subjects:
Optical properties
Propietats òptiques
Semiconductors
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Summary:The origin of the microscopic inhomogeneities in InxGa1−xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8 μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05
ISSN:0021-8979
1089-7550
DOI:10.1063/1.365881