Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD

• Published in: Thin solid films 2006-04, Vol.501 (1), p.247-251
• Main Authors: Fonrodona, M., Soler, D., Villar, F., Escarré, J., Asensi, J.M., Bertomeu, J., Andreu, J.
• Format: Article
• Language: English
• Subjects: Applied sciences; Chemical vapor deposition; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Cèl·lules solars; Deposició química en fase vapor; Energia solar; Energy; Exact sciences and technology; Hot-Wire CVD; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Microcrystalline silicon; Natural energy; Photoelectric conversion: solar cells and arrays; Photovoltaic conversion; Physics; Silici; Silicon; Solar cells; Solar cells. Photoelectrochemical cells; Solar energy
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2005.07.146

Hot-Wire Chemical Vapor Deposition has led to microcrystalline silicon solar cell efficiencies similar to those obtained with Plasma Enhanced CVD. The light-induced degradation behavior of microcrystalline silicon solar cells critically depends on the properties of their active layer. In the regime close to the transition to amorphous growth (around 60% of amorphous volume fraction), cells incorporating an intrinsic layer with slightly higher crystalline fraction and [220] preferential orientation are stable after more than 7000 h of AM1.5 light soaking. On the contrary, solar cells whose intrinsic layer has a slightly lower crystalline fraction and random or [111] preferential orientation exhibit clear light-induced degradation effects. A revision of the efficiencies of Hot-Wire deposited microcrystalline silicon solar cells is presented and the potential efficiency of this technology is also evaluated.