Microcrystalline silicon thin film transistors obtained by hot-wire CVD

Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques are in tough competition with the objective to obtain device-quality polysilic...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2000, Vol.69, p.526-529
Main Authors: Puigdollers, J, Dosev, D, Orpella, A, Voz, C, Peiro, D, Bertomeu, J, Marsal, L.F, Pallares, J, Andreu, J, Alcubilla, R
Format: Article
Language:English
Subjects:
Applied sciences
Chemical vapor deposition
Cèl·lules solars
Deposició química en fase vapor
Electronics
Exact sciences and technology
Hot-wire CVD
Microcrystalline silicon
Microelectronics
Microelectrònica
Pel·lícules fines
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Silici
Silicon
Solar cells
Thin film transistors
Thin films
Transistors
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Summary:Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques are in tough competition with the objective to obtain device-quality polysilicon thin films at low temperature. In this paper we present the preliminary results obtained with the fabrication of TFT deposited by hot-wire chemical vapor deposition (HWCVD). Some results concerned with the structural characterization of the material and electrical performance of the device are presented.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(99)00252-4