Domain matched epitaxial growth of Bi1.5Zn1Nb1.5O7 thin films by pulsed laser deposition

• Published in: Journal of alloys and compounds 2014-02, Vol.586, p.524-528
• Main Authors: Krishnaprasad, P.S., Antony, Aldrin, Rojas, Fredy, Bertomeu, Joan, Jayaraj, M.K.
• Format: Article
• Language: English
• Subjects: Bismuth zinc niobate; Ceràmiques electròniques; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Crystal structure; Dielectric thin films; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Difracció de raigs X; Domain matching epitaxy; Electric fields; Electronic ceramics; Epitaxial growth; Epitaxy; Exact sciences and technology; HRTEM; Lasers; Làsers; Metalls; Metals; Microelectronics; Microelectrònica; Microscòpia electrònica de transmissió; Optoelectronics; Optoelectrònica; Pel·lícules fines; Physics; Pole figures; Pulsed laser deposition; Semiconductors; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Thin films; Transmission electron microscopy; X-rays diffraction; Zinc oxide
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2013.10.025

•Epitaxial BZN thin films were deposited on Al2O3 by Pulsed laser deposition.•This is the first report on domain matched epitaxial growth of BZN thin films.•The pole figure analysis gives deep insight into the structural orientation of BZN.•Fourier filtered TEM images of BZN–ZnO interface reveals the domain matched epitaxial growth.•Epitaxial BZN thin films shows higher tunability and low dielectric loss. Bi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were grown by pulsed laser deposition on Al2O3 with a double ZnO buffer layer through domain matching epitaxy (DME) mechanism. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The pole figure analysis also shows a 60° twinning for the (222) oriented crystals. Sharp intense spots in the SAED pattern also indicate the high crystalline nature of BZN thin film. The Fourier filtered HRTEM images of the BZN–ZnO interface confirms the domain matched epitaxy of BZN with ZnO buffer. An electric field dependent dielectric tunability of 68% was obtained for the BZN thin films with inter digital capacitors patterned over the film.