Selective ablation of photovoltaic materials with UV laser sources for monolithic interconnection of devices based on a-Si:H

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2009-03, Vol.159, p.18-22
• Main Authors: Molpeceres, C., Lauzurica, S., García-Ballesteros, J.J., Morales, M., Guadaño, G., Ocaña, J.L., Fernández, S., Gandía, J.J., Villar, F., Nos, O., Bertomeu, J.
• Format: Article
• Language: English
• Subjects: Ablació amb làser; Energia fotovoltaica; Fotònica; Laser ablation; Laser processing; Pel·lícules fines; Photonics; Photovoltaic power generation; Thin films; Thin-film laser ablation; Thin-film silicon
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/j.mseb.2008.09.012

Lasers are essential tools for cell isolation and monolithic interconnection in thin-film-silicon photovoltaic technologies. Laser ablation of transparent conductive oxides (TCOs), amorphous silicon structures and back contact removal are standard processes in industry for monolithic device interconnection. However, material ablation with minimum debris and small heat affected zone is one of the main difficulty is to achieve, to reduce costs and to improve device efficiency. In this paper we present recent results in laser ablation of photovoltaic materials using excimer and UV wavelengths of diode-pumped solid-state (DPSS) laser sources. We discuss results concerning UV ablation of different TCO and thin-film silicon (a-Si:H and nc-Si:H), focussing our study on ablation threshold measurements and process–quality assessment using advanced optical microscopy techniques. In that way we show the advantages of using UV wavelengths for minimizing the characteristic material thermal affection of laser irradiation in the ns regime at higher wavelengths. Additionally we include preliminary results of selective ablation of film on film structures irradiating from the film side (direct writing configuration) including the problem of selective ablation of ZnO films on a-Si:H layers. In that way we demonstrate the potential use of UV wavelengths of fully commercial laser sources as an alternative to standard backscribing process in device fabrication.