Photodiodes based on fullerene semiconductor

Fullerene thin films have been deposited by thermal evaporation on glass substrates at room temperature. A comprehensive optical characterization was performed, including low-level optical absorption measured by photothermal deflection spectroscopy. The optical absorption spectrum reveals a direct b...

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Bibliographic Details
Published in:Thin solid films 2007-07, Vol.515 (19), p.7675-7678
Main Authors: Voz, C., Puigdollers, J., Cheylan, S., Fonrodona, M., Stella, M., Andreu, J., Alcubilla, R.
Format: Article
Language:English
Subjects:
Applied sciences
Components electrònics
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Díodes
Díodes de silici
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronics
Enginyeria electrònica
Exact sciences and technology
Fullerene
Fullerenes and related materials
diamonds, graphite
Materials science
Optoelectronic devices
Organic semiconductors
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon diodes
Specific materials
Surface double layers, schottky barriers, and work functions
Work function
Àrees temàtiques de la UPC
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Summary:Fullerene thin films have been deposited by thermal evaporation on glass substrates at room temperature. A comprehensive optical characterization was performed, including low-level optical absorption measured by photothermal deflection spectroscopy. The optical absorption spectrum reveals a direct bandgap of 2.3 eV and absorption bands at 2.8 and 3.6 eV, which are related to the creation of charge-transfer excitons. Various photodiodes on indium–tin-oxide coated glass substrates were also fabricated, using different metallic contacts in order to compare their respective electrical characteristics. The influence of a poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) buffer layer between the indium–tin-oxide electrode and the fullerene semiconductor is also demonstrated. These results are discussed in terms of the workfunction for each electrode. Finally, the behaviour of the external quantum efficiency is analyzed for the whole wavelength spectrum.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2006.11.160