The Magnetic Proximity Effect Induced Large Valley Splitting in 2D InSe/FeI2 Heterostructures

The manipulation of valley splitting has potential applications in valleytronics, which lacks in pristine two-dimensional (2D) InSe. Here, we demonstrate that valley physics in InSe can be activated via the magnetic proximity effect exerted by ferromagnetic FeI2 substrate with spin-orbit coupling. T...

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Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2020-08, Vol.10 (9), p.1642
Main Authors: Lin, Yifeng, Zhang, Changcheng, Guan, Lixiu, Sun, Zhipeng, Tao, Junguang
Format: Article
Language:English
Subjects:
Anisotropy
Energy
Ferromagnetism
first-principles calculations
Graphene
Heterostructures
Hybridization
InSe
Investigations
Magnetic anisotropy
Magnetic fields
magnetic proximity effect
Proximity
Proximity effect (electricity)
spin-orbit coupling
Spin-orbit interactions
Splitting
Substrates
Symmetry
Tensile strain
Valleys
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Summary:The manipulation of valley splitting has potential applications in valleytronics, which lacks in pristine two-dimensional (2D) InSe. Here, we demonstrate that valley physics in InSe can be activated via the magnetic proximity effect exerted by ferromagnetic FeI2 substrate with spin-orbit coupling. The valley splitting energy can reach 48 meV, corresponding to a magnetic exchange field of ~800 T. The system also presents magnetic anisotropy behavior with its easy magnetization axis tunable from in-plane to out-of-plane by the stacking configurations and biaxial tensile strain. The d-orbital-resolved magnetic anisotropic energy contributions indicate that the tensile strain effect arises from the increase of hybridization between minority Fe dxy and dx2−y2 states. Our results reveal that the magnetic proximity effect is an effective approach to stimulate the valley properties in InSe to extend its spintronic applications, which is expected to be feasible in other group-III monochalcogenides.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano10091642