Dependence of Functional Parameters of Sine-Gated InGaAs/InP Single-Photon Avalanche Diodes on the Gating Parameters

In this paper, we investigateda self-developed sine wave gated single-photon detector (SPD) for 1550 nm wavelength primary for quantum key distribution (QKD) usage. We studied the influence of DC bias voltage and AC gate amplitude on the SPD's functional parameters and presented a simple and ef...

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Bibliographic Details
Published in:IEEE photonics journal 2022-04, Vol.14 (2), p.1-9
Main Authors: Losev, Anton, Zavodilenko, Vladimir, Koziy, Andrey, Kurochkin, Yury, Gorbatsevich, Alexander
Format: Article
Language:English
Subjects:
Algorithms
Amplitudes
Avalanche diodes
Dark count rate
Detectors
Electric potential
Laser modes
Logic gates
Measurement by laser beam
Optimization
Parameters
Photon avalanches
Photonics
Photons
Quantum cryptography
quantum efficiency
Shape
Sine waves
single photon avalanche diode
single photon detector
Single-photon avalanche diodes
Voltage
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Summary:In this paper, we investigateda self-developed sine wave gated single-photon detector (SPD) for 1550 nm wavelength primary for quantum key distribution (QKD) usage. We studied the influence of DC bias voltage and AC gate amplitude on the SPD's functional parameters and presented a simple and effective algorithm for its optimization. Such optimization showed practical benefits while SPD was set up on the QKD device. We admitted that the dark count rate decreases with an increase in gating voltage with fixed photon detection efficiency. We observed the charge persistence effect in sine-gated SPDs, which previously had been observed only at square-pulses gated SPDs, and showed that this effect is limiting for infinity increasing gate amplitude.
ISSN:1943-0655
1943-0655
1943-0647
DOI:10.1109/JPHOT.2022.3148204