Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties

Unabated, worldwide trends in CO 2 production project growth to > 43-BMT per year over the next two decades. Efficient power electronics are crucial to fully realizing the CO 2 mitigating benefits of a worldwide smart grid (~ 18% reduction for the United States alone). Even state-of-the-art SiC h...

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Bibliographic Details
Published in:Scientific reports 2021-03, Vol.11 (1), p.6859-6859, Article 6859
Main Authors: Sampayan, S. E., Grivickas, P. V., Conway, A. M., Sampayan, K. C., Booker, I., Bora, M., Caporaso, G. J., Grivickas, V., Nguyen, H. T., Redeckas, K., Schoner, A., Voss, L. F., Vengris, M., Wang, L.
Format: Article
Language:English
Subjects:
639/166
639/624
Carbon dioxide
Conduction
Crystals
Energy
High voltage
Humanities and Social Sciences
MATERIALS SCIENCE
multidisciplinary
Science
Science (multidisciplinary)
Silicon carbide
Spectroscopy
Transistors
Voltage
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Summary:Unabated, worldwide trends in CO 2 production project growth to > 43-BMT per year over the next two decades. Efficient power electronics are crucial to fully realizing the CO 2 mitigating benefits of a worldwide smart grid (~ 18% reduction for the United States alone). Even state-of-the-art SiC high voltage junction devices are inefficient because of slow transition times (~ 0.5-μs) and limited switching rates at high voltage (~ 20-kHz at ≥ 15-kV) resulting from the intrinsically limited charge carrier drift speed (
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-021-85275-6