Using Modified-Intake Plasma-Enhanced Metal-Organic Chemical Vapor Deposition System to Grow Gallium Doped Zinc Oxide

We have used a modified-intake plasma-enhanced metal-organic chemical vapor deposition (MIPEMOCVD) system to fabricate gallium-doped zinc oxide (GZO) thin films with varied Ga content. The MIPEMOCVD system contains a modified intake system of a mixed tank and a spraying terminal to deliver the metal...

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Bibliographic Details
Published in:Micromachines (Basel) 2021-12, Vol.12 (12), p.1590
Main Authors: Lei, Po-Hsun, Chen, Jia-Jan, Song, Ming-Hsiu, Zhan, Yuan-Yu, Jiang, Zong-Lin
Format: Article
Language:English
Subjects:
Aqueous solutions
Chemical vapor deposition
Electric properties
Electrodes
Ga-doped ZnO (GZO)
Gallium nitrides
Glass substrates
Grain boundaries
Indium
Indium tin oxides
Intake systems
Light emitting diodes
Metalorganic chemical vapor deposition
modified-intake plasma-enhanced metal–organic chemical vapor deposition (MIPEMOCVD)
Molecular beam epitaxy
n-ZnO/p-GaN light-emitting diode (LED)
Organic chemicals
Organic chemistry
Plasma etching
Precursors
Radio frequency
Spraying
Substrates
Thin films
Transmittance
Zinc oxide
Zinc oxides
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Summary:We have used a modified-intake plasma-enhanced metal-organic chemical vapor deposition (MIPEMOCVD) system to fabricate gallium-doped zinc oxide (GZO) thin films with varied Ga content. The MIPEMOCVD system contains a modified intake system of a mixed tank and a spraying terminal to deliver the metal-organic (MO) precursors and a radio-frequency (RF) system parallel to the substrate normal, which can achieve a uniform distribution of organic precursors in the reaction chamber and reduce the bombardment damage. We examined the substitute and interstitial mechanisms of Ga atoms in zinc oxide (ZnO) matrix in MIPEMOCVD-grown GZO thin films through crystalline analyses and Hall measurements. The optimal Ga content of MIPEMOCVD-grown GZO thin film is 3.01 at%, which shows the highest conductivity and transmittance. Finally, the optimal MIPEMOCVD-grown GZO thin film was applied to n-ZnO/p-GaN LED as a window layer. As compared with the indium-tin-oxide (ITO) window layer, the n-ZnO/p-GaN LED with the MIPEMOCVD-grown GZO window layer of the rougher surface and higher transmittance at near UV range exhibits an enhanced light output power owing to the improved light extraction efficiency (LEE).
ISSN:2072-666X
2072-666X
DOI:10.3390/mi12121590