Indium tin oxide synthesized by a low cost route as SEGFET pH sensor

Polycrystalline ITO films with good optoelectronic properties and homogeneous surface were obtained by annealing at 550 C in N2 atmosphere using a low-cost chemical vapour deposition (CVD) system. The films were evaluated as pH sensors in separative extended gate field-effect transistor (SEGFET) app...

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Bibliographic Details
Published in:Materials research (São Carlos, São Paulo, Brazil) São Paulo, Brazil), 2013-09, Vol.16 (5), p.1156-1160
Main Authors: Vieira, N C S, Fernandes, E G R, de, Queiroz A A A, Guimaraes, F E G, Zucolotto, V
Format: Article
Language:eng ; por
Subjects:
Annealing
Biosensors
Chemical vapor deposition
CVD
ENGINEERING, CHEMICAL
field-effect transistor
Indium tin oxide
ITO
Low cost
MATERIALS SCIENCE, MULTIDISCIPLINARY
METALLURGY & METALLURGICAL ENGINEERING
Optoelectronics
pH sensor
Sensors
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Summary:Polycrystalline ITO films with good optoelectronic properties and homogeneous surface were obtained by annealing at 550 C in N2 atmosphere using a low-cost chemical vapour deposition (CVD) system. The films were evaluated as pH sensors in separative extended gate field-effect transistor (SEGFET) apparatus, exhibiting a sensitivity of 53 mV/pH, close to the expected Nernstian theoretical value for ion sensitive materials. The use of CVD to synthesise ITO may represent an alternative route for fabrication of SEGFET pH sensors at low cost for use in disposable biosensors, since H+ ions are the product of several oxyreductase enzymes.
ISSN:1516-1439
1980-5373
1980-5373
DOI:10.1590/S1516-14392013005000101