Leakage current reduction for a double-leg boost converter by switching transition synchronisation

With wide-bandgap transistors, the leakage current through the parasitic transistor to heat sink capacitance is increased with the operation at higher switching transition voltage slopes. This study presents a modulation synchronisation method for a double-leg boost converter to reduce these leakage...

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Bibliographic Details
Published in:Journal of engineering (Stevenage, England) England), 2019-06, Vol.2019 (17), p.3789-3792
Main Authors: Zehelein, Matthias, Ruthardt, Johannes, Nitzsche, Maximillian, Tymosch, Tobias, Roth-Stielow, Jörg
Format: Article
Language:English
Subjects:
current reduction
double-leg boost converter
heat sink capacitance
heat sinks
higher switching transition voltage slopes
leakage current path
leakage currents
modulation synchronisation method
parasitic transistor
switching convertors
The 9th International Conference on Power Electronics, Machines and Drives (PEMD 2018)
transistor turn-on transition
transistors
transition synchronisation
turn-off transition
wide band gap semiconductors
wide-bandgap transistors
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Summary:With wide-bandgap transistors, the leakage current through the parasitic transistor to heat sink capacitance is increased with the operation at higher switching transition voltage slopes. This study presents a modulation synchronisation method for a double-leg boost converter to reduce these leakage currents. Having a similar leakage current path, the transistors turn-on transition of one leg is synchronised on the turn-off transition of the second leg.
ISSN:2051-3305
2051-3305
DOI:10.1049/joe.2018.8128