Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell

Basic knowledge about the factors and mechanisms affecting the performance of solar cells and their identification is essential when thinking of future improvements to the device. Within this paper, we investigated the current transport mechanism in GaAsN p-i-n solar cells grown with atmospheric pre...

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Bibliographic Details
Published in:Energies (Basel) 2021-08, Vol.14 (15), p.4651
Main Authors: Dawidowski, Wojciech, Ściana, Beata, Bielak, Katarzyna, Mikolášek, Miroslav, Drobný, Jakub, Serafińczuk, Jarosław, Lombardero, Iván, Radziewicz, Damian, Kijaszek, Wojciech, Kósa, Arpád, Florovič, Martin, Kováč, Jaroslav, Algora, Carlos, Stuchlíková, L’ubica
Format: Article
Language:English
Subjects:
carrier transport mechanism
Deep level transient spectroscopy
dilute nitrides
Efficiency
Electrical measurement
Epitaxial growth
GaAsN
Interstitial defects
J-V-T measurements
Metalorganic chemical vapor deposition
Nitrogen
Photovoltaic cells
Power
reciprocal lattice maps
solar cell
Solar cells
Spectroscopy
Spectrum analysis
Temperature dependence
Vapor phase epitaxy
Vapor phases
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Summary:Basic knowledge about the factors and mechanisms affecting the performance of solar cells and their identification is essential when thinking of future improvements to the device. Within this paper, we investigated the current transport mechanism in GaAsN p-i-n solar cells grown with atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE). We examined the electro-optical and structural properties of a GaAsN solar cell epitaxial structure and correlated the results with temperature-dependent current-voltage measurements and deep level transient spectroscopy findings. The analysis of J-V-T measurements carried out in a wide temperature range allows for the determination of the dominant current transport mechanism in a GaAsN-based solar cell device and assign it a nitrogen interstitial defect, the presence of which was confirmed by DLTFS investigation.
ISSN:1996-1073
1996-1073
DOI:10.3390/en14154651