Hall effect in gated single-wall carbon nanotube films

The presence of hopping carriers and grain boundaries can sometimes lead to anomalous carrier types and density overestimation in Hall-effect measurements. Previous Hall-effect studies on carbon nanotube films reported unreasonably large carrier densities without independent assessments of the carri...

Full description

Saved in:
Bibliographic Details
Published in:Scientific reports 2022-01, Vol.12 (1), p.101-101, Article 101
Main Authors: Yomogida, Yohei, Horiuchi, Kanako, Okada, Ryotaro, Kawai, Hideki, Ichinose, Yota, Nishidome, Hiroyuki, Ueji, Kan, Komatsu, Natsumi, Gao, Weilu, Kono, Junichiro, Yanagi, Kazuhiro
Format: Article
Language:English
Subjects:
639/301/1005/1007
639/925/357/73
Carbon
carbon nanotubes
Electromagnetism
electronic devices
ENGINEERING
fullerenes
Humanities and Social Sciences
multidisciplinary
Science
Science (multidisciplinary)
Thin films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c633t-42a1f1d09a0e5b3ce192ad0ef959e6cc3982c68b14b9b53180dc071b628e0c913
cites cdi_FETCH-LOGICAL-c633t-42a1f1d09a0e5b3ce192ad0ef959e6cc3982c68b14b9b53180dc071b628e0c913
container_end_page 101
container_issue 1
container_start_page 101
container_title Scientific reports
container_volume 12
creator Yomogida, Yohei
Horiuchi, Kanako
Okada, Ryotaro
Kawai, Hideki
Ichinose, Yota
Nishidome, Hiroyuki
Ueji, Kan
Komatsu, Natsumi
Gao, Weilu
Kono, Junichiro
Yanagi, Kazuhiro
description The presence of hopping carriers and grain boundaries can sometimes lead to anomalous carrier types and density overestimation in Hall-effect measurements. Previous Hall-effect studies on carbon nanotube films reported unreasonably large carrier densities without independent assessments of the carrier types and densities. Here, we have systematically investigated the validity of Hall-effect results for a series of metallic, semiconducting, and metal–semiconductor-mixed single-wall carbon nanotube films. With carrier densities controlled through applied gate voltages, we were able to observe the Hall effect both in the n - and p -type regions, detecting opposite signs in the Hall coefficient. By comparing the obtained carrier types and densities against values derived from simultaneous field-effect-transistor measurements, we found that, while the Hall carrier types were always correct, the Hall carrier densities were overestimated by up to four orders of magnitude. This significant overestimation indicates that thin films of one-dimensional SWCNTs are quite different from conventional hopping transport systems.
doi_str_mv 10.1038/s41598-021-03911-7
format article
fullrecord <record><control><sourceid>proquest_doaj_</sourceid><recordid>TN_cdi_doaj_primary_oai_doaj_org_article_07d2dc811a4d4117bdd6d186117d7847</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><doaj_id>oai_doaj_org_article_07d2dc811a4d4117bdd6d186117d7847</doaj_id><sourcerecordid>2618237511</sourcerecordid><originalsourceid>FETCH-LOGICAL-c633t-42a1f1d09a0e5b3ce192ad0ef959e6cc3982c68b14b9b53180dc071b628e0c913</originalsourceid><addsrcrecordid>eNp9kstu1TAQhiMEolXpC7BAEWzYBDx24ssGCVX0IlViA2vLsSepj3LsYidUvD3OSSktC7yx5fn9zcV_Vb0G8gEIkx9zC52SDaHQEKYAGvGsOqak7RrKKH3-6HxUnea8I2V1VLWgXlZHrFWKKw7HFb8001TjMKCdax_q0czo6uzDOGFzt8asSX0MdTAhzkuP9eCnfX5VvRjMlPH0fj-pvp9_-XZ22Vx_vbg6-3zdWM7Y3LTUwACOKEOw65lFUNQ4goPqFHJrmZLUctlD26u-YyCJs0RAz6lEYhWwk-pq47podvo2-b1Jv3Q0Xh8uYhq1SbO3E2oiHHVWApjWtQCid447kLwcnZCtKKxPG-t26ffoLIY5mekJ9Gkk-Bs9xp9aijI10RXA2w0Q8-x1tn5Ge2NjCGV2GhRp-SHL-_ssKf5YMM9677PFaTIB45I15SApEx2szb37R7qLSwplnqtKdUJyRYuKbiqbYs4Jh4eKgejVCnqzgi5W0Acr6LWKN497fXjy5-OLgG2CXEJhxPQ393-wvwFmDLwn</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2619578692</pqid></control><display><type>article</type><title>Hall effect in gated single-wall carbon nanotube films</title><source>Publicly Available Content Database</source><source>PubMed Central(OpenAccess)</source><source>Free Full-Text Journals in Chemistry</source><source>Springer Nature - nature.com Journals - Fully Open Access</source><creator>Yomogida, Yohei ; Horiuchi, Kanako ; Okada, Ryotaro ; Kawai, Hideki ; Ichinose, Yota ; Nishidome, Hiroyuki ; Ueji, Kan ; Komatsu, Natsumi ; Gao, Weilu ; Kono, Junichiro ; Yanagi, Kazuhiro</creator><creatorcontrib>Yomogida, Yohei ; Horiuchi, Kanako ; Okada, Ryotaro ; Kawai, Hideki ; Ichinose, Yota ; Nishidome, Hiroyuki ; Ueji, Kan ; Komatsu, Natsumi ; Gao, Weilu ; Kono, Junichiro ; Yanagi, Kazuhiro ; Rice Univ., Houston, TX (United States)</creatorcontrib><description>The presence of hopping carriers and grain boundaries can sometimes lead to anomalous carrier types and density overestimation in Hall-effect measurements. Previous Hall-effect studies on carbon nanotube films reported unreasonably large carrier densities without independent assessments of the carrier types and densities. Here, we have systematically investigated the validity of Hall-effect results for a series of metallic, semiconducting, and metal–semiconductor-mixed single-wall carbon nanotube films. With carrier densities controlled through applied gate voltages, we were able to observe the Hall effect both in the n - and p -type regions, detecting opposite signs in the Hall coefficient. By comparing the obtained carrier types and densities against values derived from simultaneous field-effect-transistor measurements, we found that, while the Hall carrier types were always correct, the Hall carrier densities were overestimated by up to four orders of magnitude. This significant overestimation indicates that thin films of one-dimensional SWCNTs are quite different from conventional hopping transport systems.</description><identifier>ISSN: 2045-2322</identifier><identifier>EISSN: 2045-2322</identifier><identifier>DOI: 10.1038/s41598-021-03911-7</identifier><identifier>PMID: 34996961</identifier><language>eng</language><publisher>London: Nature Publishing Group UK</publisher><subject>639/301/1005/1007 ; 639/925/357/73 ; Carbon ; carbon nanotubes ; Electromagnetism ; electronic devices ; ENGINEERING ; fullerenes ; Humanities and Social Sciences ; multidisciplinary ; Science ; Science (multidisciplinary) ; Thin films</subject><ispartof>Scientific reports, 2022-01, Vol.12 (1), p.101-101, Article 101</ispartof><rights>The Author(s) 2022</rights><rights>2022. The Author(s).</rights><rights>The Author(s) 2022. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c633t-42a1f1d09a0e5b3ce192ad0ef959e6cc3982c68b14b9b53180dc071b628e0c913</citedby><cites>FETCH-LOGICAL-c633t-42a1f1d09a0e5b3ce192ad0ef959e6cc3982c68b14b9b53180dc071b628e0c913</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.proquest.com/docview/2619578692/fulltextPDF?pq-origsite=primo$$EPDF$$P50$$Gproquest$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/2619578692?pq-origsite=primo$$EHTML$$P50$$Gproquest$$Hfree_for_read</linktohtml><link.rule.ids>230,314,727,780,784,885,25753,27924,27925,37012,37013,44590,53791,53793,75126</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/34996961$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/servlets/purl/1904647$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Yomogida, Yohei</creatorcontrib><creatorcontrib>Horiuchi, Kanako</creatorcontrib><creatorcontrib>Okada, Ryotaro</creatorcontrib><creatorcontrib>Kawai, Hideki</creatorcontrib><creatorcontrib>Ichinose, Yota</creatorcontrib><creatorcontrib>Nishidome, Hiroyuki</creatorcontrib><creatorcontrib>Ueji, Kan</creatorcontrib><creatorcontrib>Komatsu, Natsumi</creatorcontrib><creatorcontrib>Gao, Weilu</creatorcontrib><creatorcontrib>Kono, Junichiro</creatorcontrib><creatorcontrib>Yanagi, Kazuhiro</creatorcontrib><creatorcontrib>Rice Univ., Houston, TX (United States)</creatorcontrib><title>Hall effect in gated single-wall carbon nanotube films</title><title>Scientific reports</title><addtitle>Sci Rep</addtitle><addtitle>Sci Rep</addtitle><description>The presence of hopping carriers and grain boundaries can sometimes lead to anomalous carrier types and density overestimation in Hall-effect measurements. Previous Hall-effect studies on carbon nanotube films reported unreasonably large carrier densities without independent assessments of the carrier types and densities. Here, we have systematically investigated the validity of Hall-effect results for a series of metallic, semiconducting, and metal–semiconductor-mixed single-wall carbon nanotube films. With carrier densities controlled through applied gate voltages, we were able to observe the Hall effect both in the n - and p -type regions, detecting opposite signs in the Hall coefficient. By comparing the obtained carrier types and densities against values derived from simultaneous field-effect-transistor measurements, we found that, while the Hall carrier types were always correct, the Hall carrier densities were overestimated by up to four orders of magnitude. This significant overestimation indicates that thin films of one-dimensional SWCNTs are quite different from conventional hopping transport systems.</description><subject>639/301/1005/1007</subject><subject>639/925/357/73</subject><subject>Carbon</subject><subject>carbon nanotubes</subject><subject>Electromagnetism</subject><subject>electronic devices</subject><subject>ENGINEERING</subject><subject>fullerenes</subject><subject>Humanities and Social Sciences</subject><subject>multidisciplinary</subject><subject>Science</subject><subject>Science (multidisciplinary)</subject><subject>Thin films</subject><issn>2045-2322</issn><issn>2045-2322</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>PIMPY</sourceid><sourceid>DOA</sourceid><recordid>eNp9kstu1TAQhiMEolXpC7BAEWzYBDx24ssGCVX0IlViA2vLsSepj3LsYidUvD3OSSktC7yx5fn9zcV_Vb0G8gEIkx9zC52SDaHQEKYAGvGsOqak7RrKKH3-6HxUnea8I2V1VLWgXlZHrFWKKw7HFb8001TjMKCdax_q0czo6uzDOGFzt8asSX0MdTAhzkuP9eCnfX5VvRjMlPH0fj-pvp9_-XZ22Vx_vbg6-3zdWM7Y3LTUwACOKEOw65lFUNQ4goPqFHJrmZLUctlD26u-YyCJs0RAz6lEYhWwk-pq47podvo2-b1Jv3Q0Xh8uYhq1SbO3E2oiHHVWApjWtQCid447kLwcnZCtKKxPG-t26ffoLIY5mekJ9Gkk-Bs9xp9aijI10RXA2w0Q8-x1tn5Ge2NjCGV2GhRp-SHL-_ssKf5YMM9677PFaTIB45I15SApEx2szb37R7qLSwplnqtKdUJyRYuKbiqbYs4Jh4eKgejVCnqzgi5W0Acr6LWKN497fXjy5-OLgG2CXEJhxPQ393-wvwFmDLwn</recordid><startdate>20220107</startdate><enddate>20220107</enddate><creator>Yomogida, Yohei</creator><creator>Horiuchi, Kanako</creator><creator>Okada, Ryotaro</creator><creator>Kawai, Hideki</creator><creator>Ichinose, Yota</creator><creator>Nishidome, Hiroyuki</creator><creator>Ueji, Kan</creator><creator>Komatsu, Natsumi</creator><creator>Gao, Weilu</creator><creator>Kono, Junichiro</creator><creator>Yanagi, Kazuhiro</creator><general>Nature Publishing Group UK</general><general>Nature Publishing Group</general><general>Nature Portfolio</general><scope>C6C</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7X7</scope><scope>7XB</scope><scope>88A</scope><scope>88E</scope><scope>88I</scope><scope>8FE</scope><scope>8FH</scope><scope>8FI</scope><scope>8FJ</scope><scope>8FK</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BBNVY</scope><scope>BENPR</scope><scope>BHPHI</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>FYUFA</scope><scope>GHDGH</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>K9.</scope><scope>LK8</scope><scope>M0S</scope><scope>M1P</scope><scope>M2P</scope><scope>M7P</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>Q9U</scope><scope>7X8</scope><scope>OIOZB</scope><scope>OTOTI</scope><scope>5PM</scope><scope>DOA</scope></search><sort><creationdate>20220107</creationdate><title>Hall effect in gated single-wall carbon nanotube films</title><author>Yomogida, Yohei ; Horiuchi, Kanako ; Okada, Ryotaro ; Kawai, Hideki ; Ichinose, Yota ; Nishidome, Hiroyuki ; Ueji, Kan ; Komatsu, Natsumi ; Gao, Weilu ; Kono, Junichiro ; Yanagi, Kazuhiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c633t-42a1f1d09a0e5b3ce192ad0ef959e6cc3982c68b14b9b53180dc071b628e0c913</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>639/301/1005/1007</topic><topic>639/925/357/73</topic><topic>Carbon</topic><topic>carbon nanotubes</topic><topic>Electromagnetism</topic><topic>electronic devices</topic><topic>ENGINEERING</topic><topic>fullerenes</topic><topic>Humanities and Social Sciences</topic><topic>multidisciplinary</topic><topic>Science</topic><topic>Science (multidisciplinary)</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yomogida, Yohei</creatorcontrib><creatorcontrib>Horiuchi, Kanako</creatorcontrib><creatorcontrib>Okada, Ryotaro</creatorcontrib><creatorcontrib>Kawai, Hideki</creatorcontrib><creatorcontrib>Ichinose, Yota</creatorcontrib><creatorcontrib>Nishidome, Hiroyuki</creatorcontrib><creatorcontrib>Ueji, Kan</creatorcontrib><creatorcontrib>Komatsu, Natsumi</creatorcontrib><creatorcontrib>Gao, Weilu</creatorcontrib><creatorcontrib>Kono, Junichiro</creatorcontrib><creatorcontrib>Yanagi, Kazuhiro</creatorcontrib><creatorcontrib>Rice Univ., Houston, TX (United States)</creatorcontrib><collection>SpringerOpen</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Health &amp; Medical Collection</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Biology Database (Alumni Edition)</collection><collection>Medical Database (Alumni Edition)</collection><collection>Science Database (Alumni Edition)</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Natural Science Collection</collection><collection>Hospital Premium Collection</collection><collection>Hospital Premium Collection (Alumni Edition)</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>ProQuest Central Essentials</collection><collection>Biological Science Collection</collection><collection>AUTh Library subscriptions: ProQuest Central</collection><collection>Natural Science Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central</collection><collection>Health Research Premium Collection</collection><collection>Health Research Premium Collection (Alumni)</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Health &amp; Medical Complete (Alumni)</collection><collection>ProQuest Biological Science Collection</collection><collection>Health &amp; Medical Collection (Alumni Edition)</collection><collection>Medical Database</collection><collection>Science Database (ProQuest)</collection><collection>Biological Science Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central Basic</collection><collection>MEDLINE - Academic</collection><collection>OSTI.GOV - Hybrid</collection><collection>OSTI.GOV</collection><collection>PubMed Central (Full Participant titles)</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>Scientific reports</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yomogida, Yohei</au><au>Horiuchi, Kanako</au><au>Okada, Ryotaro</au><au>Kawai, Hideki</au><au>Ichinose, Yota</au><au>Nishidome, Hiroyuki</au><au>Ueji, Kan</au><au>Komatsu, Natsumi</au><au>Gao, Weilu</au><au>Kono, Junichiro</au><au>Yanagi, Kazuhiro</au><aucorp>Rice Univ., Houston, TX (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hall effect in gated single-wall carbon nanotube films</atitle><jtitle>Scientific reports</jtitle><stitle>Sci Rep</stitle><addtitle>Sci Rep</addtitle><date>2022-01-07</date><risdate>2022</risdate><volume>12</volume><issue>1</issue><spage>101</spage><epage>101</epage><pages>101-101</pages><artnum>101</artnum><issn>2045-2322</issn><eissn>2045-2322</eissn><abstract>The presence of hopping carriers and grain boundaries can sometimes lead to anomalous carrier types and density overestimation in Hall-effect measurements. Previous Hall-effect studies on carbon nanotube films reported unreasonably large carrier densities without independent assessments of the carrier types and densities. Here, we have systematically investigated the validity of Hall-effect results for a series of metallic, semiconducting, and metal–semiconductor-mixed single-wall carbon nanotube films. With carrier densities controlled through applied gate voltages, we were able to observe the Hall effect both in the n - and p -type regions, detecting opposite signs in the Hall coefficient. By comparing the obtained carrier types and densities against values derived from simultaneous field-effect-transistor measurements, we found that, while the Hall carrier types were always correct, the Hall carrier densities were overestimated by up to four orders of magnitude. This significant overestimation indicates that thin films of one-dimensional SWCNTs are quite different from conventional hopping transport systems.</abstract><cop>London</cop><pub>Nature Publishing Group UK</pub><pmid>34996961</pmid><doi>10.1038/s41598-021-03911-7</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 2045-2322
ispartof Scientific reports, 2022-01, Vol.12 (1), p.101-101, Article 101
issn 2045-2322
2045-2322
language eng
recordid cdi_doaj_primary_oai_doaj_org_article_07d2dc811a4d4117bdd6d186117d7847
source Publicly Available Content Database; PubMed Central(OpenAccess); Free Full-Text Journals in Chemistry; Springer Nature - nature.com Journals - Fully Open Access
subjects 639/301/1005/1007
639/925/357/73
Carbon
carbon nanotubes
Electromagnetism
electronic devices
ENGINEERING
fullerenes
Humanities and Social Sciences
multidisciplinary
Science
Science (multidisciplinary)
Thin films
title Hall effect in gated single-wall carbon nanotube films
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T01%3A16%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_doaj_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Hall%20effect%20in%20gated%20single-wall%20carbon%20nanotube%20films&rft.jtitle=Scientific%20reports&rft.au=Yomogida,%20Yohei&rft.aucorp=Rice%20Univ.,%20Houston,%20TX%20(United%20States)&rft.date=2022-01-07&rft.volume=12&rft.issue=1&rft.spage=101&rft.epage=101&rft.pages=101-101&rft.artnum=101&rft.issn=2045-2322&rft.eissn=2045-2322&rft_id=info:doi/10.1038/s41598-021-03911-7&rft_dat=%3Cproquest_doaj_%3E2618237511%3C/proquest_doaj_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c633t-42a1f1d09a0e5b3ce192ad0ef959e6cc3982c68b14b9b53180dc071b628e0c913%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2619578692&rft_id=info:pmid/34996961&rfr_iscdi=true