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Quantized spin Hall conductance in a magnetically doped two dimensional topological insulator
Soon after the discovery of the quantum spin Hall effect, it has been predicted that a magnetic impurity in the presence of strong Coulomb interactions will destroy the quantum spin Hall effect. However, the fate of the quantum spin Hall effect in the presence of magnetic impurities has not yet been...
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Published in: | Nature communications 2021-05, Vol.12 (1), p.3193-3193, Article 3193 |
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description | Soon after the discovery of the quantum spin Hall effect, it has been predicted that a magnetic impurity in the presence of strong Coulomb interactions will destroy the quantum spin Hall effect. However, the fate of the quantum spin Hall effect in the presence of magnetic impurities has not yet been experimentally investigated. Here, we report the successful experimental demonstration of a quantized spin Hall resistance in HgTe quantum wells dilutely alloyed with magnetic Mn atoms. These quantum wells exhibit an inverted band structure that is very similar to that of the undoped material. Micron sized devices of (Hg,Mn)Te quantum well (in the topological phase) show a quantized spin Hall resistance of
h
/2
e
2
at low temperatures and zero magnetic field. At finite temperatures, we observe signatures of the Kondo effect due to interaction between the helical edge channels and magnetic impurities. Our work lays the foundation for future investigations of magnetically doped quantum spin Hall materials towards the realization of chiral Majorana fermions.
The quantum spin Hall effect is expected not to survive the presence of magnetic impurities. Here, authors report full quantization at very low temperatures in HgTe quantum wells alloyed with a few percent of magnetic Mn atoms, due to Kondo screening. |
doi_str_mv | 10.1038/s41467-021-23262-1 |
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h
/2
e
2
at low temperatures and zero magnetic field. At finite temperatures, we observe signatures of the Kondo effect due to interaction between the helical edge channels and magnetic impurities. Our work lays the foundation for future investigations of magnetically doped quantum spin Hall materials towards the realization of chiral Majorana fermions.
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h
/2
e
2
at low temperatures and zero magnetic field. At finite temperatures, we observe signatures of the Kondo effect due to interaction between the helical edge channels and magnetic impurities. Our work lays the foundation for future investigations of magnetically doped quantum spin Hall materials towards the realization of chiral Majorana fermions.
The quantum spin Hall effect is expected not to survive the presence of magnetic impurities. Here, authors report full quantization at very low temperatures in HgTe quantum wells alloyed with a few percent of magnetic Mn atoms, due to Kondo screening.</description><subject>639/766/119/2792/4128</subject><subject>639/766/119/2794</subject><subject>Alloying</subject><subject>Conductance</subject><subject>Electromagnetism</subject><subject>Electrons</subject><subject>Fermions</subject><subject>Humanities and Social Sciences</subject><subject>Impurities</subject><subject>Kondo effect</subject><subject>Low temperature</subject><subject>Low temperature resistance</subject><subject>Magnetic fields</subject><subject>Manganese</subject><subject>Mercury (metal)</subject><subject>multidisciplinary</subject><subject>Quantum Hall effect</subject><subject>Quantum wells</subject><subject>Resistance</subject><subject>Science</subject><subject>Science (multidisciplinary)</subject><subject>Topological 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quantum spin Hall effect, it has been predicted that a magnetic impurity in the presence of strong Coulomb interactions will destroy the quantum spin Hall effect. However, the fate of the quantum spin Hall effect in the presence of magnetic impurities has not yet been experimentally investigated. Here, we report the successful experimental demonstration of a quantized spin Hall resistance in HgTe quantum wells dilutely alloyed with magnetic Mn atoms. These quantum wells exhibit an inverted band structure that is very similar to that of the undoped material. Micron sized devices of (Hg,Mn)Te quantum well (in the topological phase) show a quantized spin Hall resistance of
h
/2
e
2
at low temperatures and zero magnetic field. At finite temperatures, we observe signatures of the Kondo effect due to interaction between the helical edge channels and magnetic impurities. Our work lays the foundation for future investigations of magnetically doped quantum spin Hall materials towards the realization of chiral Majorana fermions.
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subjects | 639/766/119/2792/4128 639/766/119/2794 Alloying Conductance Electromagnetism Electrons Fermions Humanities and Social Sciences Impurities Kondo effect Low temperature Low temperature resistance Magnetic fields Manganese Mercury (metal) multidisciplinary Quantum Hall effect Quantum wells Resistance Science Science (multidisciplinary) Topological insulators Wells |
title | Quantized spin Hall conductance in a magnetically doped two dimensional topological insulator |
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