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Wideband absorptive frequency‐selective reflector based on split‐ring resonator embedded with chip resistor

Here, a wideband absorptive frequency‐selective reflector (AFSR) based on a split‐ring resonator (SRR) embedded with chip resistors is proposed. The wide absorption band is achieved by the multimode resonances of two dipoles, and the insertion of SSRs is able to bypass the losses in the passband, th...

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Bibliographic Details
Published in:Electronics letters 2024-10, Vol.60 (20), p.n/a
Main Authors: Zhou, Bingyan, Zhang, Binchao, Chi, Baihong, Jin, Cheng
Format: Article
Language:English
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Summary:Here, a wideband absorptive frequency‐selective reflector (AFSR) based on a split‐ring resonator (SRR) embedded with chip resistors is proposed. The wide absorption band is achieved by the multimode resonances of two dipoles, and the insertion of SSRs is able to bypass the losses in the passband, thus allowing to open a wide window in addition to achieving broadband absorption performance. The upper structure consists of a dipole in series with two SSRs, while the lower dipole connects one SSR. The upper and lower structures are grouped together and rotated by 90° around the Z‐axis to form the final dual‐polarization 3D‐AFSR. The simulated results demonstrate that reflection coefficients below −10 dB are seen between 6.74–9.31 and 16.91–19.61 GHz under normal incidence, with a total fractional bandwidth of 46.8%. It also has a wide 3 dB reflection band which is obtained from 10.69 to 15.44 GHz, and the entire profile is 0.17λL, where λL is lowest operating frequency. A wideband absorptive frequency‐selective reflector based on split‐ring resonator embedded with chip resistor is proposed here. The simulated results demonstrate that, reflection coefficients below −10 dB are seen between 6.74–9.31 and 16.91–19.61 GHz under normal incidence, with a total fractional bandwidth of 46.8%. It also has a wide reflection band from 10.69 to 15.44 GHz.
ISSN:0013-5194
1350-911X
DOI:10.1049/ell2.70068