Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

Nanometer-scale resistive switching devices operated in the metallic conductance regime offer ultimately scalable and widely reconfigurable hardware elements for novel in-memory and neuromorphic computing architectures. Moreover, they exhibit high operation speed at low power arising from the ease o...

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Bibliographic Details
Published in:Beilstein journal of nanotechnology 2020, Vol.11 (1), p.92-100
Main Authors: Sánta, Botond, Molnár, Dániel, Haiber, Patrick, Gubicza, Agnes, Szilágyi, Edit, Zolnai, Zsolt, Halbritter, András, Csontos, Miklós
Format: Article
Language:English
Subjects:
Bandwidths
Electric contacts
Electric fields
Full Research Paper
High speed
Internet of Things
Iodine
memristor
nanojunction
Nanoscience
nanosecond operation
Nanotechnology
Nanotechnology devices
Point contact
Reconfigurable hardware
Resistance
resistive switching
Scanning probe microscopes
Silver
silver iodide (agi)
Switching
Thin films
Voltage pulses
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Summary:Nanometer-scale resistive switching devices operated in the metallic conductance regime offer ultimately scalable and widely reconfigurable hardware elements for novel in-memory and neuromorphic computing architectures. Moreover, they exhibit high operation speed at low power arising from the ease of the electric-field-driven redistribution of only a small amount of highly mobile ionic species upon resistive switching. We investigate the memristive behavior of a so-far less explored representative of this class, the Ag/AgI material system in a point contact arrangement established by the conducting PtIr tip of a scanning probe microscope. We demonstrate stable resistive switching duty cycles and investigate the dynamical aspects of non-volatile operation in detail. The high-speed switching capabilities are explored by a custom-designed microwave setup that enables time-resolved studies of subsequent set and reset transitions upon biasing the Ag/AgI/PtIr nanojunctions with sub-nanosecond voltage pulses. Our results demonstrate the potential of Ag-based filamentary memristive nanodevices to serve as the hardware elements in high-speed neuromorphic circuits.
ISSN:2190-4286
2190-4286
DOI:10.3762/bjnano.11.9