Near-infrared emission in Er:ZnO thin films with embedded Si nanoparticles synthesized by ion implantation

Er-doped ZnO thin films on a SiO2/Si substrate were fabricated by radio frequency magnetron sputtering, in which embedded Si nanoparticles (NPs) were formed by ion implantation and subsequent thermal annealing. The effects of Si NPs on the Er photoluminescence (PL) at 1.54 m were investigated. In ad...

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Bibliographic Details
Published in:Materials research express 2020-06, Vol.7 (6), p.66402
Main Authors: Li, Kaikai, Yu, Shuang, Ma, Changsheng, Lu, Fei, Liu, Kaijing, Xu, Yuhang, Ma, Changdong
Format: Article
Language:English
Subjects:
Annealing
Chemical synthesis
Emission analysis
Energy transfer
Heat treatment
Ion implantation
Luminescence
Magnetron sputtering
Nanoparticles
Near infrared radiation
Photoluminescence
Silicides
Silicon dioxide
silicon nanoparticles
Silicon substrates
thin film
Thin films
Zinc oxide
Zinc silicates
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Summary:Er-doped ZnO thin films on a SiO2/Si substrate were fabricated by radio frequency magnetron sputtering, in which embedded Si nanoparticles (NPs) were formed by ion implantation and subsequent thermal annealing. The effects of Si NPs on the Er photoluminescence (PL) at 1.54 m were investigated. In addition to the typical emission at 1.54 m from Er3+, a new 1.16- m emission peak was also observed after a thermal treatment. Further annealing resulted in shift of emission intensity between the 1.16- and 1.54- m luminescence features. The observed Si nanoparticles (NPs) were ∼4 nm in diameter. The formation of new components Zn2SiO4 and Er2Si2O7 was also presented in this study. The 1.16- m luminescence is attributed to the Si NPs, and the suppression of Si NPs related emission is caused by consumption of Si in the formation of Er silicate and zinc silicide and the energy transfer between Si NPs and Er3+. The intensity of Er3+ related 1.54- m PL can be modulated by the Si NPs fabricated by implantation and optimizing the annealing condition.
ISSN:2053-1591
2053-1591
DOI:10.1088/2053-1591/ab9858